Pressure-less plasma sintering of Cu paste for SiC die-attach of high-temperature power device manufacturing

Pressure-less sintering of Cu flake paste is achieved assisted by hydrogen plasma process toward die-attach technique of next-generation high-temperature power semiconductor devices. The sintered paste shows high bond strength aver 50 MPa, showing large abnormal grain growth at the bonding interface, with homogeneously distributed void of porous interconnection layer. Our results indicate that still the reduction of the surface oxide of Cu flake powders, and thus both the metal powder synthesis and the bonding process must be optimized to achieve a sound bonding interface.