Decrease in electron capture cross-section in SIMOX with supplemental implant

The purpose of this work is to explore ways to improve the quality of SIMOX and the performance of devices fabricated on SIMOX substrates. The performance of devices fabricated in the silicon overlayer is highly dependent on the electrical properties of the buried oxide. Electron traps due to oxygen deficiency in the buried oxide material, and the resulting Si-Si bonding, impact device reliability and oxide leakage. In an effort to reduce or eliminate these traps we implanted 1x10¹⁷ and 5x10¹⁷ cm^-2 supplemental oxygen atoms into the buried oxide. Avalanche electron injection is used to determine the density and capture cross-sections of the traps