Silicon-on-quartz for low power electronic applications

We have developed a novel Silicon-on-Quartz (SOQ) technology for fabricating SOI devices and circuits for low power electronics applications. SOQ substrate is fabricated by direct bonding of a silicon wafer with an etch-stop layer, and a quartz wafer, at room temperature, followed by thinning using surface grinding and selective etching techniques. We have successfully fabricated SOQ CMOS devices and demonstrated transistors with high mobility and low leakage currents. Thermal stress management techniques employed for the successful fabrication of the SOQ CMOS devices and the advantages of the SOQ approach for low power electronics are discussed