Common origin of hot carrier charging of gate and buried oxide in SOI (SIMOX) MOSFETs

Author

Zaleski, Andrzej ; Sinha, Shankar P. ; Ioannou, Dimitris E. ; Campisi, George J. ; Jenkins, W.C. ; Hughes, Harold L.

Author_Institution

Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA

fYear

1994

fDate

3-6 Oct 1994

Firstpage

125

Lastpage

126

Abstract

Hot electron/hole trapping in the gate and buried oxides of SOI (SIMOX) MOSFETs is investigated by combining the sequential front/back channel hot-electron stressing technique and measurements of static transistor characteristics. In this technique pure hot-hole injection is achieved by keeping the channel accumulated while stressing the opposite channel under electron injection conditions. Three lots of PD devices (denoted 3A, 12A, and 15A) fabricated on SIMOX wafers with channel lengths down to 0.8 μm were investigated. The main difference between these lots were in the drain design, in an effort to develop hot-electron resistant circuits for space/satellite applications

Keywords

MOSFET; SIMOX; buried layers; electron traps; hole traps; hot carriers; 0.8 mum; SIMOX wafers; SOI MOSFET; accumulated channel; buried oxide; channel length; drain design; electron injection conditions; gate oxide; hot carrier charging; hot electron trapping; hot hole trapping; hot-electron resistant circuits; hot-hole injection; sequential front/back channel hot-electron stressing; static transistor characteristics; Charge carrier processes; Degradation; Electron traps; Filling; Hot carriers; Laboratories; MOSFET circuits; Secondary generated hot electron injection; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1994 Proceedings., 1994 IEEE International

Conference_Location

Nantucket, MA

Print_ISBN

0-7803-2406-4

Type

conf

DOI

10.1109/SOI.1994.514278

Filename

514278