DocumentCode :
2352715
Title :
Nonlinear absorption in a strained InGaAs/GaAs MQW/n-i-p-i structure
Author :
Van Eck, T.E. ; Aron, K.P. ; Hansen, G.A. ; Lytel, R.S. ; Niki, S. ; Chang, W.S.C. ; Wieder, H.H.
Author_Institution :
Lockheed Palo Alto Researcg Laboratory
fYear :
1990
fDate :
16-20 July 1990
Firstpage :
111
Lastpage :
112
Keywords :
Absorption; Charge measurement; Current measurement; Density measurement; Gallium arsenide; Indium gallium arsenide; Probes; Pulse measurements; Quantum well devices; Radiative recombination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonlinear Optics: Materials, Phenomena and Devices, 1990. Digest. NLO '90.
Conference_Location :
Kauai, HI, USA
Type :
conf
DOI :
10.1109/NLO.1990.695865
Filename :
695865
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2352715
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