DocumentCode :
235312
Title :
Improvement of substrate and package warpage by copper plating process optimization
Author :
Bchir, Ouiem ; Jomaa, Houssam ; Chin Kwan Kim ; Rouhana, Layal ; Kuiwon Kang ; Shah, Mubarak ; Bezuk, Steve
Author_Institution :
Qualcomm Technol., Inc., San Diego, CA, USA
fYear :
2014
fDate :
27-30 May 2014
Firstpage :
1396
Lastpage :
1400
Abstract :
High substrate warpage can lead to unacceptable yield loss during chip attach in assembly, and cause high yield fallout during package mount on the circuit board. For the first time, through this work, the electrolytic copper (Cu) plating process in substrate manufacturing was shown to contribute significantly to package warpage. For a 14×14mm package, reducing the Cu plating rate (within the manufacturing operating window) resulted in 21% package warpage reduction, while a change in Cu plating solution provided an additional 6% reduction (total 27% reduction). Hence the Cu plating process and solution must be carefully scrutinized to minimize package warpage, specifically for thin packages (<;1mm) where Cu stresses become a large contributing factor.
Keywords :
copper; electroplating; integrated circuit packaging; integrated circuit reliability; Cu; Cu plating process; chip attach; circuit board; electrolytic copper plating process; high substrate warpage; high yield fallout; package mount; package warpage; substrate manufacturing; Chemistry; Copper; Current density; Residual stresses; Substrates; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2014 IEEE 64th
Conference_Location :
Orlando, FL
Type :
conf
DOI :
10.1109/ECTC.2014.6897475
Filename :
6897475
Link To Document :
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