Title :
Optical Properties Of Asymmetric Triangular Quantum Wells For Self Electro-optic Effect Devices
Author :
Puechner, R.A. ; Gerber, D.S. ; Johnson, D.A. ; Droopad, R. ; Maracas, G.N.
Author_Institution :
Arizona State University
Keywords :
Electrooptic devices; Gallium arsenide; Linear approximation; Molecular beam epitaxial growth; Optical devices; P-i-n diodes; Photoconductivity; Quantum well devices; Solid state circuits; Voltage;
Conference_Titel :
Nonlinear Optics: Materials, Phenomena and Devices, 1990. Digest. NLO '90.
Conference_Location :
Kauai, HI, USA
DOI :
10.1109/NLO.1990.695867
