Impact of velocity overshoot, polysilicon depletion, and inversion layer quantization on NMOSFET scaling

Author

Orshansky, M. ; Sinitsky, D. ; Scrobahaci, P. ; Bokor, J. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1998

fDate

22-24 June 1998

Firstpage

18

Lastpage

19

Abstract

The impact of electron velocity overshoot on MOSFET scaling is investigated. The calibration of a MEDICI 2D device simulator to experimental data is first described. Then, NMOS scaling trends are studied using the calibrated simulator. Inversion layer quantization effects and polysilicon gate depletion are taken into account, and are shown to have a significant impact on NMOS current drive. The results show that velocity overshoot will allow continued enhancement of the NMOS current drive, despite power supply voltage scaling.

Keywords

MOSFET; electric current; electron mobility; elemental semiconductors; inversion layers; quantisation (quantum theory); semiconductor device models; silicon; MEDICI 2D device simulator calibration; MOSFET scaling; NMOS current drive; NMOS scaling; NMOSFET scaling; Si; SiO/sub 2/-Si; electron velocity overshoot; inversion layer quantization; inversion layer quantization effects; polysilicon depletion; polysilicon gate depletion; power supply voltage scaling; velocity overshoot; MOSFET circuits; Quantization;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731103

Filename

731103