DocumentCode
2353272
Title
Deep submicron transferred-substrate heterojunction bipolar transistors
Author
Lee, Q. ; Martin, S.C. ; Mensa, D. ; Pullela, R. ; Smith, R.P. ; Agarwal, B. ; Guthrie, J. ; Rodwell, M.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1998
fDate
22-24 June 1998
Firstpage
26
Lastpage
27
Abstract
Using e-beam lithography and combined reactive-ion and wet-chemical etches, we have fabricated transferred-substrate heterojunction bipolar transistors (HBTs) with 0.2 μm emitter and 0.6 μm collector widths and a measured DC current gain of 14. Devices with 0.4 μm emitter and 1.0 μm collector widths obtain record 500 GHz f/sub max/ value.
Keywords
electron beam lithography; etching; heterojunction bipolar transistors; semiconductor device testing; sputter etching; 0.2 micron; 0.4 micron; 0.6 micron; 1 micron; 500 GHz; DC current gain; collector width; combined reactive-ion/wet-chemical etches; e-beam lithography; emitter width; reactive-ion etch; transferred-substrate HBTs; transferred-substrate heterojunction bipolar transistors; wet-chemical etch; Current measurement; Gain measurement; Heterojunction bipolar transistors; Lithography; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1998. 56th Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-4995-4
Type
conf
DOI
10.1109/DRC.1998.731106
Filename
731106
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