DocumentCode
2353415
Title
The series connection of IGBTs with optimised voltage sharing in the switching transient
Author
Palmer, Patrick R. ; Githiari, Anthony N.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
1
fYear
1995
fDate
18-22 Jun 1995
Firstpage
44
Abstract
This paper reviews the reasons that make series operation of IGBTs attractive and challenging. Then, a new approach which uses the IGBT´s gate controlled active regime in place of large series sharing snubbers is proposed. This technique is shown to improve the voltage sharing during switching transients and may lead to more compact and efficient high voltage power modules
Keywords
insulated gate bipolar transistors; power semiconductor switches; power system transients; switching circuits; transients; gate controlled active regime; high voltage power modules; large series sharing snubbers; optimised voltage sharing; series connected IGBT; switching transient; Circuits; Frequency; Insulated gate bipolar transistors; MOSFETs; Medical simulation; Multichip modules; Snubbers; Switching loss; Temperature; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-2730-6
Type
conf
DOI
10.1109/PESC.1995.474790
Filename
474790
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