A new spin-valve magnetic memory cell based on patterned single-domain magnetic multilayer NiFe/Cu/Co

In a conventional spin-valve magnetic memory cell, where a nonmagnetic metal is sandwiched between two-magnetic layers, the magnetization of one magnetic layer (the pinned layer) is fixed by an anti-ferromagnetic FeMn layer (the pinning layer). However, the FeMn can be easily oxidized, creating instability. In this paper, we demonstrate a new spin-valve magnetic cell, where the magnetization of one magnetic layer is fixed through the spontaneous formation of a single-domain due to nanopatterning, and pinning layers (such as FeMn) are no longer required. Magnetic multilayer samples with a NiFe(10 nm)/Co(1 nm)/Cu(13 nm)/Co(10 nm)/NiFe(2 nm) structure were deposited on a SiO/sub 2/ substrate using a DC sputtering system. The samples were patterned using nanoimprint lithography and an ion milling process.