High speed diamond DUV-detectors

Author

Gluche, P. ; Kohn, O. ; Ebert, W. ; Nebel, C.E. ; Floter, A. ; Kohn, E.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

1998

fDate

22-24 June 1998

Firstpage

56

Lastpage

57

Abstract

Diamond is an ideal material for solar blind DUV-detection below wavelengths of 225 nm. However, only a few experiments have been reported until now, mainly on polycrystalline statistically-oriented diamond films, using interdigitated finger structures (Jackman, 1996). Here, we report on diamond DUV detectors fabricated on highly oriented diamond (HOD) films on silicon as well as on single crystal diamond substrates. Planar MSM-structures, based on photoconduction, as well as the first vertical Schottky diode structures, based on carrier separation in the space charge region, were investigated.

Keywords

Schottky diodes; diamond; elemental semiconductors; metal-semiconductor-metal structures; photoconducting devices; space charge; ultraviolet detectors; 225 nm; C; C-Si; DUV-detection wavelengths; Si; carrier separation; diamond DUV detectors; diamond DUV-detectors; highly oriented diamond films; interdigitated finger structures; photoconduction; planar MSM-structures; polycrystalline statistically-oriented diamond films; silicon substrates; single crystal diamond substrates; solar blind DUV-detection; space charge region; vertical Schottky diode structures; Detectors; Fingers; Photoconductivity; Schottky diodes; Semiconductor films; Silicon; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731119

Filename

731119