Title :
Pt-silicide source and drain SOI-MOSFET operating in bi-channel modes
Author :
Nishisaka, M. ; Ochiai, Y. ; Asano, T.
Author_Institution :
Center for Microelectron. Syst., Kyushu Inst. of Technol., Fukuoka, Japan
Abstract :
Recently, MOSFETs with metal/silicon contacts at source and drain have been attracting a great deal of attention. The Schottky barrier nature of the source contact offers the field emission of electrons from the source to the channel, which offers potential application to very small MOSFETs. In fact, this type of MOSFET has been demonstrated using bulk Si devices. From the viewpoint of suppression of floating body effects in an n-channel SOI-MOSFET, we have shown that the use of Schottky contacts at the source and drain is very effective and have demonstrated the successful operation of an n-channel SOI-MOSFET using Er-silicide Schottky contacts (Nishisaka and Asano, 1998). In this work, we report for the first time the complementary operation of an SOI-MOSFET with Pt-silicide source/drain contacts. It is shown that the single MOSFET can operate at room temperature in both n- and p-channel modes, so that complementary circuits can be realised without any control of the conduction-type of the silicon active layer.
Keywords :
MOSFET; Schottky barriers; electron field emission; platinum compounds; semiconductor device metallisation; semiconductor device testing; silicon-on-insulator; 20 C; Er-silicide Schottky contacts; MOSFET size; MOSFETs; Pt-silicide source/drain SOI-MOSFETs; Pt-silicide source/drain contacts; PtSi-Si-SiO/sub 2/-Si; Schottky barrier; Schottky contacts; Si; bi-channel operating modes; complementary circuits; complementary operation; drain metal/silicon contacts; electron field emission; floating body effects; n-channel SOI-MOSFET; n-channel mode; p-channel mode; silicon active layer conduction type; source metal/silicon contacts; Circuits; Electron emission; MOSFETs; Schottky barriers; Silicon; Temperature control;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731127