Title :
P1J-1 Temperature Characteristics of Pure Shear Mode FBARs Consisting of (1120) Textured ZnO Films
Author :
Yanagitani, Takahiko ; Kiuchi, Masato ; Matsukawa, Mami ; Watanabe, Yoshiaki
Author_Institution :
Kansai collaboration center, National Inst. of Adv. Ind. Sci. & Technol., Osaka
Abstract :
Thickness extensional mode FBAR consisting of (0001) textured ZnO films and pure thickness shear mode FBAR consisting of (112macr0) textured ZnO films were fabricated. Temperature coefficients of frequency (TCF) of these FBARs were measured in the temperature range of 10-60 degC. In both of the resonators, the parallel resonant frequencies varied linearly with temperature. The TCF were determined as -63.1 [ppm/degC] for thickness extensional mode resonator and -34.7 [ppm/degC] for pure-shear mode resonator
Keywords :
II-VI semiconductors; acoustic resonators; bulk acoustic wave devices; thin films; wide band gap semiconductors; zinc compounds; (0001) textured ZnO film; (112macr0) textured ZnO film; 10 to 60 C; ZnO; parallel resonant frequency; pure shear mode FBAR; pure-shear mode resonator; temperature coefficients of frequency; thickness extensional mode FBAR; thickness extensional mode resonator; Electrodes; Film bulk acoustic resonators; Frequency; Piezoelectric films; Sensor phenomena and characterization; Sputtering; Substrates; Temperature distribution; Temperature measurement; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2006.367
