Title :
4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltage
Author :
Singh, R. ; Irvine, K.G. ; Kordina, O. ; Palmour, J.W. ; Levinshtein, M.E. ; Rumyanestev, S.L.
Author_Institution :
Cree Res. Inc., Durham, NC, USA
Abstract :
High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to <50 kHz and <120°C, thereby severely limiting the availability of advanced electronic hardware used for energy storage, pulsed power, intelligent machinery and solid state power conditioning. These components require high power density, very high frequency, high temperature devices like the 4H-SiC P-i-N rectifier. This paper reports the design, fabrication and characterization of such a rectifier with a blocking voltage >5.5 kV, good on-state and fast switching characteristics. This is the highest blocking voltage 4H-SiC device reported to date.
Keywords :
p-i-n diodes; power semiconductor diodes; power semiconductor switches; semiconductor device testing; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 120 C; 4H-SiC P-i-N rectifier; 4H-SiC bipolar P-i-N diodes; 5.5 kV; 50 kHz; Si; SiC; blocking voltage; electronic hardware; energy storage; high power density devices; high temperature devices; high voltage Si P-i-N diodes; intelligent machinery; on-state; pulsed power; rectifier blocking voltage; semiconductor materials; solid state power conditioning; switching characteristics; very high frequency devices; Availability; Energy storage; Hardware; Machine intelligence; Machinery; P-i-n diodes; Rectifiers; Semiconductor materials; Solid state circuits; Voltage;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731132
