Ion-implanted static induction transistors in 4H-SiC

Author

Agarwal, A.K. ; Chen, L.-S. ; Eldridge, G.W. ; Siergiej, R.R. ; Clarke, R.C.

Author_Institution

Northrop Grummen Sci. & Technol. Center, Pittsburgh, PA, USA

fYear

1998

fDate

22-24 June 1998

Firstpage

94

Lastpage

95

Abstract

This paper reports the first demonstration of ion-implanted 4H-SiC static induction transistors (SITs) for microwave power generation in L and S bands. Ion implanted SITs were measured with 35 W output power at L-band (1.3 GHz) with an associated gain of 7 dB, drain efficiency of 52%, and power density of 15.5 W/cm. Technologies developed to enable the fabrication of this device include blanket nitrogen implantation for N/sup +/ contacts, and selective aluminum implantation for sub-micron p-n junction gate formation.

Keywords

aluminium; microwave field effect transistors; microwave generation; microwave power transistors; nitrogen; silicon compounds; static induction transistors; wide band gap semiconductors; 0.39 to 1.55 GHz; 1.3 GHz; 1.55 to 5.2 GHz; 35 W; 4H-SiC SITs; 52 percent; 7 dB; L-band microwave power generation; S-band microwave power generation; SIT gain; SIT output power; SiC:N,Al; blanket nitrogen implantation; device fabrication; drain efficiency; ion implanted SITs; ion-implanted 4H-SiC static induction transistors; ion-implanted static induction transistors; microwave power generation; p-n junction gate formation; power density; selective aluminum implantation; Aluminum; Density measurement; Fabrication; Gain measurement; L-band; Microwave devices; Microwave transistors; Nitrogen; Power generation; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731136

Filename

731136