Title :
Recent progress in 4H-SiC static induction transistors for high frequency power generation
Author :
Bojko, R. ; Siergiej, R.R. ; Eldridge, G.W. ; Chen, L.-S. ; Morse, A.W. ; Ostop, J. ; Esker, P.M. ; Barron, B. ; Clarke, R.C. ; Brandt, C.D.
Author_Institution :
Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA
Abstract :
For the first time, 4H-SiC static induction transistors (SITs) have demonstrated 400 W pulsed L-band (1.3 GHz) performance (16.7 W/cm source periphery). Additionally, air-bridged parts have shown 78 W pulsed S-band (2.9 GHz) performance (15.1 W/cm source periphery), as well as 47 W pulsed S-band (4 GHz) performance, which represents the highest power densities yet reported for microwave SITs. The extraordinarily high power densities observed in SiC SITs derive from the remarkable physical properties of SiC. The high value of breakdown field strength (∼3 MV/cm), the large value of saturated electron velocity (2×10/sup 7/ cm/s), and the metallic-like thermal conductivity (4.9 W/cm·K) synergistically combine to generate the observed high power densities at high frequency.
Keywords :
electron mobility; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; silicon compounds; static induction transistors; thermal conductivity; wide band gap semiconductors; 1.3 GHz; 2.9 GHz; 20000000 cm/s; 4 GHz; 400 W; 47 W; 4H-SiC static induction transistors; 78 W; SITs; SiC; SiC SITs; SiC physical properties; air-bridged parts; breakdown field strength; high frequency power generation; metallic-like thermal conductivity; microwave SITs; power density; pulsed L-band performance; pulsed S-band performance; saturated electron velocity; source periphery; Frequency; Power generation;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731137
