A high-performance poly-Si TFT technology compatible with flexible plastic substrates

Author

Tung, Y.-J. ; Carey, P.M. ; Smith, P.M. ; Theiss, S.D. ; Meng, X. ; Weiss, R. ; Davis, G.A. ; Aebi, V. ; King, T.-J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1998

fDate

22-24 June 1998

Firstpage

102

Lastpage

103

Abstract

The development of a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) technology which is compatible with plastic substrates is critical to the realisation of active matrix flat-panel displays that are flexible, lightweight, low cost and rugged. In this paper, we present performance comparisons of self-aligned aluminium top-gate poly-Si TFTs fabricated using a maximum substrate temperature of 150/spl deg/C using excimer laser annealing. The best devices have effective carrier mobilities >90 cm/Vs, threshold voltage <10 V and breakdown voltage >35 V. These are the highest performance poly-Si TFTs reported to date for use with polyester substrates.

Keywords

carrier mobility; elemental semiconductors; flat panel displays; laser beam annealing; liquid crystal displays; plastic packaging; silicon; thin film transistors; 10 V; 150 C; 35 V; Al-Si; active matrix flat-panel displays; breakdown voltage; carrier mobility; display cost; display flexibility; excimer laser annealing; flexible plastic substrates; plastic substrate compatibility; poly-Si TFT technology; poly-Si TFTs; polycrystalline silicon thin film transistor technology; polyester substrates; self-aligned aluminium top-gate poly-Si TFTs; substrate temperature; threshold voltage; Active matrix technology; Aluminum; Annealing; Costs; Displays; Plastics; Silicon; Substrates; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1998. 56th Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-4995-4

Type

conf

DOI

10.1109/DRC.1998.731139

Filename

731139