DocumentCode :
2353878
Title :
Semiconductor silicon carbide-expectation for power devices
Author :
Matsunami, H.
Author_Institution :
Kyoto University
fYear :
1990
fDate :
1990
Firstpage :
13
Lastpage :
18
Keywords :
Chemical vapor deposition; Crystalline materials; Crystallization; Crystals; Epitaxial growth; Light emitting diodes; Semiconductor materials; Silicon carbide; Temperature; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991051
Filename :
991051
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2353878
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