DocumentCode :
2353916
Title :
A breakdown voltage simulator for semiconductor devices TonaddeIIb
Author :
Omura, I. ; Nakagawa, A.
Author_Institution :
Toshiba Corp.
fYear :
1990
fDate :
1990
Firstpage :
26
Lastpage :
31
Keywords :
Avalanche breakdown; Breakdown voltage; Charge carrier processes; Electrodes; P-n junctions; Poisson equations; Semiconductor devices; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991053
Filename :
991053
Link To Document :
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