DocumentCode :
2353941
Title :
Optical Properties Of Strained-layer Inas/gaas Quantum Wells In Hetero N-i-p-i Structures
fYear :
1990
fDate :
16-20 July 1990
Firstpage :
122
Lastpage :
123
Keywords :
Epitaxial growth; Gallium arsenide; Laboratories; Laser transitions; Nonlinear optics; Optical modulation; Optical sensors; Optical superlattices; Quantum well lasers; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonlinear Optics: Materials, Phenomena and Devices, 1990. Digest. NLO '90.
Conference_Location :
Kauai, HI, USA
Type :
conf
DOI :
10.1109/NLO.1990.695871
Filename :
695871
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2353941
