Title :
Evaluation of AlGaN-GaN HFETs up to 750/spl deg/C
Author :
Daumiller, I. ; Kirchner, C. ; Kamp, K. ; Ebeling, K.J. ; Pond, L. ; Weitzel, C.E. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Abstract :
GaN based FET structures offer the potential of high speed, high power and high temperature operation beyond that of GaAs based FET devices, which have been operated up to 500°C. Here, operation of a Si-doped channel AlGaN-GaN HFET up to 750°C in vacuum is evaluated. Specifically, three parts of the device structure were evaluated: (a) the Schottky contact, (b) the active channel region with its channel sheet charge, and (c) the buffer layer.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; doping profiles; field effect transistors; gallium compounds; semiconductor device testing; semiconductor heterojunctions; silicon; thermal analysis; 500 C; 750 C; AlGaN-GaN HFETs; AlGaN-GaN:Si; GaAs based FET devices; GaN based FET structures; Schottky contact; Si-doped channel AlGaN-GaN HFET; active channel region; buffer layer; channel sheet charge; device structure; high power operation; high speed operation; high temperature operation; operating temperature; vacuum operation; Aluminum gallium nitride; Buffer layers; FETs; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Schottky barriers; Temperature;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731144
