• DocumentCode
    2353957
  • Title

    A multi-cell mosfet with exponential VG-ID characteristics

  • Author

    Sekine, Keisuke ; Shono, Katsufusa

  • Author_Institution
    Sophia University
  • fYear
    1990
  • fDate
    1990
  • Firstpage
    38
  • Lastpage
    41
  • Keywords
    Electron beams; Fabrication; MOS devices; MOSFET circuits; Power MOSFET; Semiconductor device modeling; Testing; Threshold voltage; Virtual colonoscopy; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
  • ISSN
    1063-6854
  • Type

    conf

  • DOI
    10.1109/ISPSD.1990.991055
  • Filename
    991055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2353957