DocumentCode :
2353957
Title :
A multi-cell mosfet with exponential VG-ID characteristics
Author :
Sekine, Keisuke ; Shono, Katsufusa
Author_Institution :
Sophia University
fYear :
1990
fDate :
1990
Firstpage :
38
Lastpage :
41
Keywords :
Electron beams; Fabrication; MOS devices; MOSFET circuits; Power MOSFET; Semiconductor device modeling; Testing; Threshold voltage; Virtual colonoscopy; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991055
Filename :
991055
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2353957
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