Title :
An addressable amorphous diamond field emission array for e-beam lithography
Author :
Paulus, M.J. ; Thomas, C.E. ; Simpson, M.L. ; Moore, J.A. ; Baylor, L.R. ; Lowndes, D.H. ; Geohegan, D.B. ; Jellison, G.E., Jr. ; Merkulov, V.I. ; Puretzky, A.A. ; Voelkl, E. ; Walter, J. ; Garber, T.W.
Author_Institution :
Oak Ridge Nat. Lab., TN, USA
Abstract :
A novel field emission array has been developed for use in a deep sub-micron electron-beam lithography system. The device consists of a two dimensional array of miniature amorphous diamond (a-D) cathodes deposited on aluminum biasing pads controlled by CMOS circuitry. Each cathode is individually addressable, providing a matrix of independent electron beams. Although the prototype devices presented here are controlled by external ASICs, a low-temperature fabrication process is employed so that future arrays may be placed directly on completed CMOS wafers. The CMOS circuitry addresses and controls the cathodes, providing dynamic control of the e-beam matrix.
Keywords :
CMOS integrated circuits; amorphous semiconductors; application specific integrated circuits; cathodes; diamond; electron beam lithography; elemental semiconductors; vacuum microelectronics; 2D miniature amorphous diamond cathode array; C-Al; CMOS circuit cathode addressing; CMOS circuit cathode control; CMOS control circuitry; CMOS wafers; addressable amorphous diamond field emission array; addressable cathodes; aluminum biasing pads; dynamic e-beam matrix control; e-beam lithography; electron-beam lithography system; external ASIC control; field emission array; independent electron beam matrix; low-temperature fabrication process; prototype devices; Amorphous materials; Lithography;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731149
