Title :
High power gaas MMIC switches with planar semi-insulated-gate fets (SIGFETs)
Author :
Yun, Yong-Hoon ; Johnson, David ; Gutmann, Ronald J.
Author_Institution :
M / A - C 0 M
Keywords :
Boron; FETs; Fabrication; Gallium arsenide; Ion implantation; MESFETs; MMICs; Radio frequency; Switches; Switching circuits;
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
DOI :
10.1109/ISPSD.1990.991058
