Title :
Tri-layer a-Si:H TFTs on polymeric substrates
Author :
Thomasson, D.B. ; Bonse, M. ; Koval, R.J. ; Huang, J.R. ; Wronski, C.R. ; Jackson, T.N.
Author_Institution :
Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Large area electronic applications such as active matrix flat panel displays currently use glass as substrate material. Glass substrates are available with large area, low cost, and with flat and smooth surfaces that simplify device processing. Glass is also heavy and fragile, however, and alternatives are of interest. Using a mountant technique, we have fabricated hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) on both colored and nearly colorless polyimide substrates with performance nearly identical to devices fabricated on glass substrates. These results indicate that with suitable thermal engineering, a-Si:H devices and circuits can be fabricated on polymeric substrates using nearly standard processing.
Keywords :
amorphous semiconductors; carrier mobility; elemental semiconductors; flat panel displays; hydrogen; liquid crystal displays; polymers; silicon; thin film transistors; Si:H; a-Si:H TFTs; a-Si:H circuits; a-Si:H devices; active matrix flat panel displays; colored polyimide substrates; device processing; extrinsic mobility; flat smooth surfaces; glass fragility; glass substrate material; glass weight; hydrogenated amorphous silicon thin film transistors; large area electronic applications; mountant technique; nearly colorless polyimide substrates; polymeric substrates; thermal engineering; tri-layer a-Si:H TFTs; Amorphous silicon; Circuits; Costs; Flat panel displays; Glass; Polyimides; Polymers; Substrates; Thermal engineering; Thin film transistors;
Conference_Titel :
Device Research Conference Digest, 1998. 56th Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-4995-4
DOI :
10.1109/DRC.1998.731150