Title :
P1M-4 Study on Formation Mechanism of (1120) Textured ZnO Films
Author :
Kawamoto, Takayuki ; Matsukawa, Mami ; Watanabe, Yoshiaki ; Yanagitani, Takahiko
Author_Institution :
Fac. of Eng., Doshisha Univ., Kyoto
Abstract :
The ZnO films where crystallites c-axis are unidirectionally aligned in the substrate plane ((112macr0) textured ZnO films) realize shear mode devices. In this study, we have studied the formation mechanism of the (112macr0) textured ZnO film, focusing on the effect of total pressure and partial pressure of oxygen and argon during sputtering deposition. In addition to the X-ray diffraction (XRD) measurement of the films, optical emissions from the RF plasma were analyzed to investigate the effect of ionic species on the growth of the ZnO films. Highly crystallized (112macr0) textured ZnO films were obtained in conditions of low total gas pressure and high oxygen concentration. In these conditions, strong optical emission spectra from oxygen species were strongly observed. The best shear mode electromechanical coupling coefficient k15 of the film was 0.16, which was 62 % of the value of single crystal
Keywords :
X-ray diffraction; crystal structure; luminescence; piezoceramics; piezoelectric thin films; sputter deposition; ultrasonic applications; ultrasonics; zinc compounds; RF plasma; X-ray diffraction; XRD; ZnO; argon partial pressure; argon total pressure; crystallized textured ZnO films; optical emission spectra; optical emissions; oxygen partial pressure; oxygen total pressure; shear mode devices; shear mode electromechanical coupling coefficient; sputtering deposition; substrate plane; textured zinc oxide film formation; unidirectional crystal; Argon; Crystallization; Optical diffraction; Optical films; Plasma measurements; Sputtering; Stimulated emission; Substrates; X-ray diffraction; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2006.388
