Title :
40 V BiCMOS technology with polysilicon emitter structure
Author :
Yamada, S. ; Yamauchi, T. ; Tokuriki, M. ; Inayoshi, K.
Author_Institution :
Fujitsu Limited
Keywords :
Annealing; BiCMOS integrated circuits; Bipolar integrated circuits; Bipolar transistors; Cutoff frequency; Etching; Fabrication; MOS devices; MOSFETs; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
DOI :
10.1109/ISPSD.1990.991065
