DocumentCode :
2354169
Title :
A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure
Author :
Huang, Q. ; Narayanan, E. M Sankara ; Kwan, K.W. ; Amaratunga, G. ; Milne, W.I.
Author_Institution :
University of Cambridge
fYear :
1990
fDate :
1990
Firstpage :
102
Lastpage :
107
Keywords :
Analytical models; CMOS process; Cathodes; Computational modeling; Computer science; Conductivity; Insulated gate bipolar transistors; Insulation; MOSFETs; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991068
Filename :
991068
Link To Document :
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