Title :
Power rectifier with integrated current sensor
Author :
Chang, H.R. ; Radun, A.V. ; Baliga, B.J.
Author_Institution :
GE Corporate Research and Development
Keywords :
Breakdown voltage; Circuits; Fabrication; Linearity; Monitoring; Power transistors; Rectifiers; Resistors; Sensor phenomena and characterization; Temperature sensors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
DOI :
10.1109/ISPSD.1990.991071
