A method of heatsink fabrication for millimeter wave high-power Gunn devices

Author

Choudhury, D. ; Foschaar, J. ; Rensch, D.B.

Author_Institution

HRL Lab., Malibu, CA, USA

fYear

1998

fDate

19-21 Oct 1998

Firstpage

386

Lastpage

389

Abstract

This paper presents a practical heatsink fabrication process for low-cost, high-power microwave and millimeter-wave devices. Using this process approach, a heatsink is developed on a very thin epilayer structure, without damaging the active layer of the device. The etch-stop layer between the wafer and the front-side power devices acts as a protective layer during the back-side fabrication process, and reduces the contact resistance between the device and its heatsink. The paper describes the complete fabrication procedure developed to realize the Gunn devices for low-cost millimeter-wave applications

Keywords

Gunn diodes; contact resistance; heat sinks; millimetre wave diodes; power semiconductor diodes; semiconductor device packaging; thermal management (packaging); Gunn devices; Gunn diodes; InGaAs-InP; InGaAs/InP thin epilayer structure; InP; InP substrate; back-side fabrication process; contact resistance; device active layer; etch-stop layer; fabrication procedure; front-side power devices; heatsink; heatsink fabrication; heatsink fabrication process; microwave devices; millimeter wave high-power Gunn devices; millimeter-wave applications; millimeter-wave devices; protective layer; Contact resistance; Electromagnetic heating; Etching; Fabrication; Frequency; Gunn devices; Indium phosphide; Laboratories; Microwave devices; Millimeter wave devices; Millimeter wave technology; Protection; Semiconductor diodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Symposium, 1998. Twenty-Third IEEE/CPMT

Conference_Location

Austin, TX

ISSN

1089-8190

Print_ISBN

0-7803-4523-1

Type

conf

DOI

10.1109/IEMT.1998.731162

Filename

731162