DocumentCode

2354329

Title

Fabrication technique of silicon power devices by liquid phase epitaxy

Author

Sukegawa, T. ; Kimura, M. ; Nim, C. ; Yano, K. ; Tanaka, A.

Author_Institution

Shizuoka University

fYear

1990

fDate

1990

Firstpage

163

Lastpage

168

Keywords

Atomic layer deposition; Atomic measurements; Doping; Epitaxial growth; Fabrication; Impurities; Lattices; Silicon; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on

ISSN

1063-6854

Type

conf

DOI

10.1109/ISPSD.1990.991078

Filename

991078