DocumentCode :
2354352
Title :
Annealing behaviour of ion implanted aluminum in silicon
Author :
Stockmeier, T. ; Braesch, P. ; Halder, E. ; Kluge-Weiss, P. ; Roggwiller, P. ; Stucki, F.
Author_Institution :
ABB Asea Brown Boveri Corporate Research
fYear :
1990
fDate :
1990
Firstpage :
169
Lastpage :
173
Keywords :
Aluminum oxide; Electric resistance; Elementary particle vacuum; Furnaces; Ion implantation; Rapid thermal annealing; Resists; Silicon; Vacuum systems; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991079
Filename :
991079
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2354352
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