DocumentCode :
2354372
Title :
An evaluation of deep-submicron CMOS design optimized for operation at 77K
Author :
Foty, Daniel
Author_Institution :
Gilgamesh Associates, VT, USA
Volume :
3
fYear :
2005
fDate :
20-23 June 2005
Firstpage :
1139
Abstract :
Using a careful and insightful analysis of the possible benefits of 77K CMOS in submicron technology from a decade ago (D. Foty and E. Nowak, 1993), the development of 77K CMOS in present-day deep submicron technology is evaluated. It is found that the basic principles from the earlier study - that the real benefit of 77K CMOS operation is the ability to provide "pure" scaling of the threshold voltage and thus to allow aggressive super-scaling of MOS transistor dimensions - holds even more strongly in present-day CMOS processes. A detailed analysis of CMOS technology, digital circuit behavior, and analog circuit behavior is provided. It is noted that not only does properly-designed 77K CMOS technology provide opportunities; it also addresses some of the most fundamental difficulties facing CMOS technology and CMOS circuit design.
Keywords :
CMOS integrated circuits; integrated circuit design; CMOS technology; analog circuit behavior; deep-submicron CMOS design; digital circuit behavior; submicron technology; Analog circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Circuit synthesis; Design optimization; Digital circuits; MOSFETs; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on
Conference_Location :
Dubrovnik, Croatia
Print_ISBN :
0-7803-8738-4
Type :
conf
DOI :
10.1109/ISIE.2005.1529084
Filename :
1529084
Link To Document :
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