DocumentCode :
2354379
Title :
Small warpage dielectrically isolated wafer for power ICs by silicon wafer direct-bonding
Author :
Furukawa, K. ; Nakagawa, A. ; Tanzawa, K. ; Kawamura, N.
Author_Institution :
Toshiba Corp.
fYear :
1990
fDate :
1990
Firstpage :
180
Lastpage :
185
Keywords :
Dielectric devices; Fabrication; Infrared imaging; Mirrors; Power integrated circuits; Silicon on insulator technology; Temperature; Very large scale integration; Voltage; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991081
Filename :
991081
Link To Document :
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