Title :
InGaAsP/InGaAlAs 1.55 μm strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90°C
Author :
Möhrle, M. ; Mörl, L. ; Sigmund, A. ; Suna, A. ; Reier, F. ; Roehle, H.
Author_Institution :
Heinrich-Hertz-Inst., Fraunhofer Inst. fur Nachrichtentechnik, Berlin, Germany
Abstract :
1.55 μm strain-compensated multi-quantum-well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90°C they support a direct modulation with 12.5 GHz.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; 1.55 mum; 12.5 GHz; 90 degC; InGaAlAs barriers; InGaAsP quantum wells; InGaAsP-InGaAlAs; InGaAsP/InGaAlAs lasers; buried heterostructure lasers; direct modulation; multiquantum well lasers; strain-compensated lasers; Cutoff frequency; High speed optical techniques; Laser beam cutting; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382728
