4-channel × 10-Gb/s operation of AlGaInAs-MQW-BH-DFB-LD array for 1-3-μm CWDM systems

Author

Tsuruoka, K. ; Kobayashi, R. ; Ohsawa, Y. ; Tsukuda, T. ; Kato, T. ; Sasaki, T. ; Nakamura, T.

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Otsu, Japan

fYear

2004

fDate

25-25 Sept. 2004

Firstpage

16

Lastpage

17

Abstract

We have developed a 4-channel AlGaInAs MQW-BH-DFB-LD array for 1.3-μm CWDM systems. High-speed characteristics up to a 10-Gb/s operation on all channels, and more than a 40-Gb/s throughput woe obtained at 85°C.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; high-speed optical techniques; optical communication equipment; optical fibre communication; quantum well lasers; semiconductor laser arrays; wavelength division multiplexing; 1.3 mum; 10 Gbit/s; 4-channel AlGaInAs array; 40 Gbit/s; 85 degC; AlGaInAs; CWDM systems; buried heterostructure laser; coarse wavelength division multiplexing; distributed feedback laser; high-speed characteristics; laser diode array; multiquantum well laser; Bit error rate; Buffer layers; Electrodes; Extinction ratio; Frequency; Parasitic capacitance; Photonics; Quantum well devices; Threshold current; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International

Conference_Location

Matsue-shi

Print_ISBN

0-7803-8627-2

Type

conf

DOI

10.1109/ISLC.2004.1382731

Filename

1382731