DocumentCode

2354465

Title

Experiments and 2D-simulations for quasi-saturation effect in ponver VDMOS transistors

Author

Park, Chan-Kwang ; Lee, Kwyro

Author_Institution

Korea Advanced Institute of Science and Technology

fYear

1990

fDate

1990

Firstpage

219

Lastpage

224

Keywords

Boron; Critical current; Degradation; Electron mobility; Epitaxial layers; Fabrication; Testing; Transconductance; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on

ISSN

1063-6854

Type

conf

DOI

10.1109/ISPSD.1990.991086

Filename

991086