DocumentCode :
2354497
Title :
Application of a proton irridation technique to high voltage thyristors
Author :
Shimizu, Y. ; Yokota, T. ; Kohno, I.
Author_Institution :
Hitachi, Ltd.
fYear :
1990
fDate :
1990
Firstpage :
231
Lastpage :
235
Keywords :
Annealing; Anodes; Cathodes; Charge carrier lifetime; Impurities; Protons; Silicon; Surface resistance; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
ISSN :
1063-6854
Type :
conf
DOI :
10.1109/ISPSD.1990.991088
Filename :
991088
Link To Document :
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