Title :
High frequency 6000 V gate GTOs with buried gate structure
Author :
Ogura, T. ; Nakagawa, A. ; Atsuta, M. ; Kamei, Y. ; Takigami, K.
Author_Institution :
Toshiba Corp.
Keywords :
Anodes; Doping profiles; Frequency; Impurities; Inverters; Research and development; Switching loss; Tail; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
DOI :
10.1109/ISPSD.1990.991092
