Title :
Switching performances of enhanced gain bipolar mode field effect transistor (BMFET)
Author :
Busatto, G. ; Ferla, G. ; Fallica, P.G. ; Musumeci, S.
Author_Institution :
I.R.E.C.E. - C.N.R.
Keywords :
Boron; Doping; Epitaxial layers; FETs; Insulated gate bipolar transistors; MOSFETs; Performance gain; Power generation; Shape; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on
DOI :
10.1109/ISPSD.1990.991095
