DocumentCode
2354633
Title
Ultra-short GaAs/AlGaAs quantum-cascade micro-lasers based on monolithically integrated semiconductor-air Bragg-mirrors
Author
Höfling, S. ; Kallweit, R. ; Wolf, A. ; Emmerling, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Tech. Phys., Wurzburg Univ., Germany
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
30
Lastpage
31
Abstract
Quantum-cascade micro-lasers with Bragg-mirrors operating up to 315 K have been realized. Due to the large mode spacing in short cavity lasers and the limited gain bandwidth, single mode emission in such devices is possible.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; integrated optics; integrated optoelectronics; laser cavity resonators; laser modes; micromirrors; quantum cascade lasers; 315 K; GaAs-AlGaAs; GaAs/AlGaAs microlasers; limited gain bandwidth; mode spacing; monolithic integration; quantum-cascade microlasers; semiconductor-air Bragg-mirrors; short cavity lasers; single mode emission; ultrashort microlasers; Bandwidth; Gallium arsenide; Laser modes; Mirrors; Optical materials; Photonic crystals; Quantum cascade lasers; Semiconductor lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382738
Filename
1382738
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