DocumentCode
2354728
Title
High power 1060-nm raised-ridge strained single-quantum-well lasers
Author
Zah, Chung-en ; Li, Yabo ; Bhat, Rajaram ; Song, Kechang ; Visovsky, Nick ; Nguyen, Hong Ky ; Liu, Xingsheng ; Hu, Martin ; Nishiyam, Nobuhiko
Author_Institution
Corning Inc., NY, USA
fYear
2004
fDate
25-25 Sept. 2004
Firstpage
39
Lastpage
40
Abstract
We report a high kink-free facet power of 852 mW and a high single-wavelength facet power of 350 mW for 1060-nm raised-ridge Fabry-Perot (FP) and distributed-feedback (DFB) lasers, respectively.
Keywords
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; ridge waveguides; waveguide lasers; 1060 nm; 350 mW; 852 mW; Fabry-Perot lasers; GaInAs-AlGaAs; distributed-feedback lasers; high kink-free facet power; high power lasers; raised-ridge lasers; strained single-quantum-well lasers; Capacitive sensors; Chemical lasers; Gratings; Holography; Optical design; Power lasers; Quantum well lasers; Solid lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location
Matsue-shi
Print_ISBN
0-7803-8627-2
Type
conf
DOI
10.1109/ISLC.2004.1382744
Filename
1382744
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