Title :
High power 1060-nm raised-ridge strained single-quantum-well lasers
Author :
Zah, Chung-en ; Li, Yabo ; Bhat, Rajaram ; Song, Kechang ; Visovsky, Nick ; Nguyen, Hong Ky ; Liu, Xingsheng ; Hu, Martin ; Nishiyam, Nobuhiko
Author_Institution :
Corning Inc., NY, USA
Abstract :
We report a high kink-free facet power of 852 mW and a high single-wavelength facet power of 350 mW for 1060-nm raised-ridge Fabry-Perot (FP) and distributed-feedback (DFB) lasers, respectively.
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; ridge waveguides; waveguide lasers; 1060 nm; 350 mW; 852 mW; Fabry-Perot lasers; GaInAs-AlGaAs; distributed-feedback lasers; high kink-free facet power; high power lasers; raised-ridge lasers; strained single-quantum-well lasers; Capacitive sensors; Chemical lasers; Gratings; Holography; Optical design; Power lasers; Quantum well lasers; Solid lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382744
