Title :
High-power, high-efficiency 1150 nm quantum well laser
Author :
Erbert, G. ; Bugge, F. ; Fricke, J. ; Ressel, P. ; Staske, R. ; Sumpf, B. ; Wenzel, H. ; Weyers, M. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-lnst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
An efficient laser structure was realized using highly strained InGaAs quantum wells and thick GaAs waveguide layers. A low divergence of 20° FWHM and reliable 5 W output power from a 60 μm stripe laser was achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor device reliability; semiconductor quantum wells; waveguide lasers; 1550 nm; 5 W; 60 mum; FWHM; GaAs waveguide layers; InGaAs; high-efficiency laser; high-power laser; quantum well laser; strained InGaAs quantum wells; stripe laser; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical waveguides; Power generation; Power lasers; Power system reliability; Pump lasers; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382745
