Title :
Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W
Author :
Paschke, K. ; Sumpf, B. ; Dittmar, F. ; Erbert, G. ; Fricke, J. ; Knauer, A. ; Schwertfeger, S. ; Wenzel, H. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was achieved.
Keywords :
laser beams; light diffraction; ridge waveguides; semiconductor lasers; waveguide lasers; 6.7 W; 980 nm; electrically separated straight sections; guided ridge waveguide; high beam quality; nearly-diffraction limited lasers; tapered diode lasers; tapered sections; Diffraction; Diode lasers; Laser beams; Laser excitation; Optical design; Power generation; Power lasers; Power measurement; Pump lasers; Semiconductor lasers;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382746
