DocumentCode :
2354848
Title :
Highly reliable 7 W operation of 644 nm wavelength laser diode arrays with top-hat near field pattern
Author :
Imanishi, Daisuke ; Sato, Yoshifumi ; Naganuma, Kaori ; Ito, Satoshi ; Hirata, Shoji
Author_Institution :
Adv. Laser Technol. Dept., Sony Corp., Kanagawa, Japan
fYear :
2004
fDate :
25-25 Sept. 2004
Firstpage :
49
Lastpage :
50
Abstract :
AlInP/GaInP 7 W laser arrays with a uniform intensity distribution and a low smile of 1 μm have been developed for a display system. The estimated lifetime exceeds 10000 hours under CW operation.
Keywords :
III-V semiconductors; aluminium compounds; display devices; gallium compounds; indium compounds; optical projectors; semiconductor device reliability; semiconductor laser arrays; 644 nm; 7 W; AlInP-GaInP; AlInP/GaInP laser arrays; continuous-wave operation; display system; highly reliable laser arrays; laser diode arrays; laser projection; top-hat near field pattern; uniform intensity distribution; Bonding; Diode lasers; Displays; Fluctuations; Life estimation; Optical arrays; Power generation; Power lasers; Semiconductor laser arrays; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
Type :
conf
DOI :
10.1109/ISLC.2004.1382749
Filename :
1382749
Link To Document :
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