DocumentCode
2354866
Title
40 Gbit/s 1.55 μm monolithic integrated GaAs-based PIN-HEMT photoreceiver
Author
Hurm, V. ; Benz, W. ; Bronner, W. ; Hülsmann, A. ; Jakobus, T. ; Köhler, K. ; Leven, A. ; Ludwig, M. ; Raynor, B. ; Rosenzweig, J. ; Schlechtweg, M. ; Thiede, A.
Author_Institution
Fraunhofer Inst. of Appl. Solid State Phys., Freiburg, Germany
Volume
3
fYear
1998
fDate
20-24 Sep 1998
Firstpage
119
Abstract
A 36.5 GHz bandwidth 1.55 μm wavelength PIN-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3-inch GaAs substrate. The PIN photodiode has a responsivity of 0.34 A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated
Keywords
HEMT integrated circuits; III-V semiconductors; gallium arsenide; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1.55 mum; 3 in; 40 Gbit/s; GHz bandwidth; GaAs; GaAs substrate; GaAs-based PIN-HEMT photoreceiver; Gbit/s optical data stream; PIN photodiode; clearly-opened eye diagrams; distributed amplifier; monolithic integrated; responsivity; Absorption; Bandwidth; Distributed amplifiers; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; PHEMTs; PIN photodiodes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 1998. 24th European Conference on
Conference_Location
Madrid
Print_ISBN
84-89900-14-0
Type
conf
DOI
10.1109/ECOC.1998.731214
Filename
731214
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