Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers

Author

Gubenko, E. ; Gadjiev, I.M. ; Inskaya, N. D Il ; Zadiranov, Yu.M. ; Zhukov, A.E. ; Ustinov, V.M. ; Alferov, Zh.I. ; Portnoi, E.L. ; Kovsh, A.R. ; Livshits, D.A. ; Ledentsov, N.N.

Author_Institution

Ioffe Phys.-Tech. Inst., St. Petersburg, Russia

fYear

2004

fDate

25-25 Sept. 2004

Firstpage

51

Lastpage

52

Abstract

Ultrashort pulses of 1.7 ps at frequency as low as 9.7 GHz are demonstrated by passive mode-locking of monolithic two-section InAs/InGaAs (λ=1.28 μm) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser mode locking; optical pulse compression; optical pulse generation; quantum dot lasers; 1.28 mum; 1.7 ps; 9.7 GHz; InAs-InGaAs; InAs/InGaAs laser; absorber section bias; mode-locking; monolithic two-section laser; pulse shortening; quantum-dot laser; ultrashort pulses; Autocorrelation; Diode lasers; Laser mode locking; Laser theory; Molecular beam epitaxial growth; Optical pulse generation; Optical pulses; Space vector pulse width modulation; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International

Conference_Location

Matsue-shi

Print_ISBN

0-7803-8627-2

Type

conf

DOI

10.1109/ISLC.2004.1382750

Filename

1382750