Experimental characterization of copper/low-k transmission line interconnects through microwave measurements

Author

Kim, Jooyong ; Neikirk, D.P.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

fYear

2003

fDate

27-29 Oct. 2003

Firstpage

93

Lastpage

96

Abstract

In this paper, we present the results of microwave measurements of copper/low-k transmission line interconnects. From measured S-parameters, the extracted R, L, and C for copper/low-k transmission lines are presented. In addition, the relative dielectric constant and loss tangent for various dielectric materials (SiO/sub 2/, low-k2 (Novellus Coral low-k dielectric), and low-k1 (JSR Corp. low-k dielectric)) up to 40 GHz are given.

Keywords

S-parameters; copper; dielectric loss measurement; integrated circuit interconnections; integrated circuit measurement; microwave measurement; permittivity measurement; silicon compounds; 500 MHz to 40 GHz; S-parameter measurements; SiO/sub 2/; copper/low-k transmission line interconnects; dielectric loss tangent; low-k dielectric materials; microwave measurements; relative dielectric constant; Circuit testing; Copper; Dielectric constant; Dielectric loss measurement; Dielectric losses; Dielectric measurements; Dielectric thin films; Microwave measurements; Scattering parameters; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 2003

Conference_Location

Princeton, NJ, USA

Print_ISBN

0-7803-8128-9

Type

conf

DOI

10.1109/EPEP.2003.1250007

Filename

1250007