Title :
Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers
Author :
Marko, I.P. ; Adams, A.R. ; Sweeney, S.J. ; Sellers, I.R. ; Mowbray, D.J. ; Skolnick, M.S. ; Liu, H.Y. ; Groom, K.M.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford, UK
Abstract :
We show that even in quantum dot lasers with very low threshold current density (Jth = 40-50 A/cm2 at 300 K) the temperature sensitivity of the threshold current arises from nonradiative recombination which comprises ∼60-70% of Jth at 300 K.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nonradiative transitions; optical losses; quantum dot lasers; spontaneous emission; 1.3 mum; 300 K; InAs-GaAs; InAs/GaAs lasers; loss mechanisms; low threshold current density; low-threshold lasers; nonradiative recombination; quantum dot lasers; spontaneous emission spectra; temperature sensitivity; Gallium arsenide; Land surface temperature; Laser stability; Quantum dot lasers; Radiative recombination; Spontaneous emission; Stationary state; Temperature distribution; Threshold current; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 2004. Conference Digest. 2004 IEEE 19th International
Conference_Location :
Matsue-shi
Print_ISBN :
0-7803-8627-2
DOI :
10.1109/ISLC.2004.1382753
